Москва, ул. Ст. Басманная, д. 21/4, стр.5
Тел: +7(495)772-95-90, доб.15250,15407
We report on high-field magnetotransport (B up to 35 T) on a gated superlattice based on single-layer graphene aligned on top of hexagonal boron nitride. The large-period moiré modulation (≈15 nm) enables us to access the Hofstadter spectrum in the vicinity of and above one flux quantum per superlattice unit cell (Φ/Φ0=1 at B=22 T). We thereby reveal, in addition to the spin-valley antiferromagnet at ν=0, two insulating states developing in positive and negative effective magnetic fields from the main ν=1 and ν=−2 quantum Hall states, respectively. We investigate the field dependence of the energy gaps associated with these insulating states, which we quantify from the temperature-activated peak resistance. Referring to a simple model of local Landau quantization of third-generation Dirac fermions arising at Φ/Φ0=1, we describe the different microscopic origins of the insulating states and experimentally determine the energy-momentum dispersion of the emergent gapped Dirac quasiparticles.
Helical edge modes of 2D topological insulators are supposed to be protected from time-reversal invariant elastic backscattering. Yet substantial deviations from the perfect conductance are typically observed experimentally down to very low temperatures. To resolve this conundrum we consider the effect of a single magnetic impurity with arbitrary spin on the helical edge transport. We consider the most general structure of the exchange interaction between the impurity and the edge electrons. Moreover, for the first time, we take into the account the local anisotropy for the impurity and show that it strongly affects the backscattering current in a wide range of voltages and temperatures. We show that the sensitivity of the backscattering current to the presence of the local anisotropy is different for half-integer and integer values of the impurity spin. In the latter case the anisotropy can significantly increase the backscattering correction to the current.